Influence of lattice deformations on the electronic structure of the molybdenum disulfide monolayer

The possibilities and conditions for modifying the band gap behavior of interband transitions under compressive tensile strains in crystal lattice a molybdenum disulfide monolayer have been determined by theoretical modeling. It is shown that depending on value direction compound may be direct-gap or indirect-gap semiconductor, such transformations are determined. results demonstrate potential use nanoelectronic devices new generation which controlled transport charge carriers possible